This paper discusses with the actual problem of radiation effects of ion beams in flash memory cells because of their applicability in control of solar cells in the space, since they are main components of devices which manage all operations of solar cells in the space. The effects of gamma rays may cause changes in stored data, or even the physical destruction of the flash memory components, since the high degree of integrated components miniaturization affects the memory sensitivity. Interaction of ion beam irradiation with the layers enclosing the floating gate, which keep all the information, provides effects that downgrade the memory cell characteristics, primary leads to the changing of the stored content or destruction of the device. Introducing theoretical, experimental and numerical set-up and results using Monte-Carlo simulation, has been examined how the cell characteristics in four types of the flash memory affect their sensitivity to ionizing radiation.