Stability of semiconductor memory characteristics in a radiation environment
Authors: Fetahović I., Vujisić M., Stanković K., Dolićanin E.
Keywords: semiconductor memory; radiation effects; simulation
Abstract:
Radiation defects in electronic device can occur in a process of its fabrication or during use. Miniaturization trends in industry and increase in level of integration of electronic components have negative affect on component’s behavior in a radiation environment. The aim of this paper is to analyze radiation effects in semiconductor memories and to establish how ionizing radiation influences characteristics and functionality of semiconductor memories. Both the experimental procedure and simulation have been used to investigate the behavior of irradiated semiconductor memories. EPROM and EEPROM commercial semiconductor memory samples have been exposed to indirect ionizing radiation to test their radiation hardness. Monte Carlo simulation method has been used to analyze the effect of direct ionizing radiation on semiconductor memory.
References:
[1] Barth, J.L., Dyer, C.S., Stassinopoulos, E.G. (2003) Space, Atmospheric, and Terrestrial Radiation Environments. IEEE Transactions on Nuclear Science, 50, 3, pp. 466-482
[2] Dolićanin, Ć.B., StankoviĆ, K.Đ., Dolićanin, D.Ć., Lončar, B.B. (2011) Statistička obrada rezultata nuklearnog brojanja. Nuclear Technology and Radiation Protection, vol. 26, br. 2, str. 164-170
[3] Holmes-Siedle, A., Adams, L. (2002) Handbook of radiation effects. New York: Oxford University Press
[4] Messenger, G.C., Ash, M.S. (1992) The effects of radiation on electronic systems. New York: Van Nostrand Reinhold
[5] Nikolić, D., Vasić, A., Fetahović, I., Stanković, K., Osmokrović, P. (2011) Photodiode behavior in radiation environment. Scientific Publications of the State University of Novi Pazar Series A: Applied Mathematics, Informatics and mechanics, vol. 3, br. 1, str. 27-34
[6] Radosavljević, R.Lj., Vasić, A.I. (2012) Effects of radiation on solar cells as photovoltaic generators. Nuclear Technology and Radiation Protection, vol. 27, br. 1, str. 28-32
[7] Stanković, K.Đ. (2011) Influence of the plain-parallel electrode surface dimensions on the type A measurement uncertainty of GM counter. Nuclear Technology and Radiation Protection, vol. 26, br. 1, str. 39-44
[8] Stanković, S.J., Iričanin, B.D., Nikolić, D., Janković, K.S., Radenković, M., Stanković, K.Đ., Osmokrović, P.V. (2012) MSV signal processing system for neutron-gamma discrimination in a mixed field. Nuclear Technology and Radiation Protection, vol. 27, br. 2, str. 165-170
[9] Vavilov, V.S., Ukhin, N.A. (1977) Radiation effects in semiconductors and semiconductor devices. New York: Consultants Bureau
[10] Vujisic, M.Lj., Stankovic, K.D., Marjanovic, N.S., Osmokrovic, P.V. (2010) Simulated Effects of Proton and Ion Beam Irradiation on Titanium Dioxide Memristors. IEEE Transaction on Nuclear Science, vol. 57, br. 4, str. 1798-1804
[11] Vujisić, M., Marjanović, N., Fetahović, I., Stanković, K., Osmokrović, P. (2012) Influence of radiation on titanium dioxide memristors. Scientific Publications of the State University of Novi Pazar Series A: Applied Mathematics, Informatics and mechanics, vol. 4, br. 1, str. 75-82
[12] Warner, J.H., i dr. (2005) Displacement damage correlation of proton and silicon ion radiation in GaAs. IEEE Trans. Nucl. Sci, 52, 6, str. 2678-2682
[13] Zdravković, M.R., Vasić, A.I., Radosavljević, R.Lj., Vujisić, M.Lj., Osmokrović, P.V. (2011) Uticaj zračenja na osobine solarnih ćelija. Nuclear Technology and Radiation Protection, vol. 26, br. 2, str. 158-163
[14] Ziegler, J.F., Biersack, J.P., Ziegler, M.D. SRIM: The stopping and range of ions in matter. http://www.srim.org