Temperature Effects on Photovoltaic Components Characteristics
Authors: M. Zdravković, A. Vasić, Ć. Dolićanin, K. Stanković, P. Osmokrović
Keywords: Temperature dependence, 1/f noise, photovoltaics, output voltage, ideality factor
Abstract:
Temperature effects and thermally induced noise in photodetectors are significant in the detection processes. Degradation of electrical and optical characteristics of the photodetectors in the increased temperature conditions is one of the most important limitation factors for their application. Since most of the electrical processes in semiconductor devices depend, in some extent, on the temperature, investigations at temperatures higher than room temperature may reveal possible changes in output characteristics of the device. From the technological point of view, thermally induced noise increase minimum signal that can be detected, which is specially important for the low energy and non ionizing radiation detectors, since the noise level presents the major performance limitation. In this paper these effects are studied through frequency noise level measurements and measurements of the main output characteristics of photovoltaic components.
References:
[1] S. Parker, Solid-State Physics Source Book, McGraw-Hill, New York, 1988.
[2] M. Stojanović, C. Jeynes, N. Bibić, M. Milosavljevć, A. Vasić, Z. Miloević, Frequency noise level of As ion implanted TiN-Ti-Si structures, Nucl. Instrum. Meth. B, Vol. 115, pp. 554-556, 1996.
[3] M. Stojanović, A. Vasić, C. Jeynes, Ion implanted silicides studies by frequency noise level measurements, Nucl. Instrum. Meth. B, Vol. 112, pp. 192-195, 1996.
[4] P.V.V. Jayaweera, P.K.D.D.P. Pitigala, A.G.U. Perera, K. Tennakone, 1/f noise and dyesensitized solar cells, Semicond. Sci. Tech. Vol. 20 pp. L40-L42, 2005.
[5] P.V.V. Jayaweera, P.K.D.D.P. Pitigala, M.K.I. Senevirante, A.G.U. Perera, K. Tennakone, 1/f noise in dye-sensitized solar cells and NIR photon detectors, Infrared Phys. Techn., Vol. 50, pp. 270-273, 2007.
[6] M. Vujisic, K. Stankovic, A. Vasic, Comparison of gamma ray effects on eproms and eeproms, Nucl. Technol. Radiat., Vol. 24, pp. 61-67, 2009.
[7] K. Stankovic, M. Vujisic, E. Dolicanin, Reliability Of Semiconductor And Gas-filled Diodes For Over-voltage Protection Exposed To Ionizing Radiation, Nucl. Technol. Radiat., Vol. 24, pp. 132-137, 2009.
[8] N. Marjanovic, M. Vujisic, K. Stankovic, D. Despotovic, P. Osmokrovic, Simulated Exposure Of Titanium Dioxide Memristors To Ion Beams, Nucl. Technol. Radiat., Vol. 25, pp. 120-125, 2010.
[9] M. Alurralde, M.J.L. Tamasi, C.J. Bruno, M.G. Martinez Bogado, J. Pla, J. Fernandez Vasquez, J. Duran, J. Shuff, A.A. Burlon, P. Stoliar, A.J. Kreiner, Experimental and theoretical radiation damage studies on crystalline silicon solar cells, Sol. Energ. Mat. Sol. C., Vol. 82, pp. 531-542, 2004.
[10] A. Vasić, P. Osmokrović, M. Vujisić, Ć. Dolićanin, K. Stanković, Possibilities of improvement of silicon solar cell characteristics by lowering noise, J Optoelectron. Adv. M., Vol. 10, pp. 2800-2804, 2008.
[11] A. Vasić, P. Osmokrović, S. Stanković, B. Lončar, Study of increased temperature influence on the degradation of photodetectors through ideality factor, Mat. Sci. Forum, Vol. 453-454, pp. 37-42, 2004.
[12] K. Stankovic, M. Vujisic, Lj. Delic, Influence Of Tube Volume On Measurement Uncertainty Of GM Counters, Nucl. Technol. Radiat., Vol. 25, pp. 46-50, 2010.
[13] K. Stankovic, M. Vujisic, Influence of radiation energy and angle of incidence on the uncertainty in measurements by GM counters, Nucl. Technol. Radiat., Vol. 23, pp. 41-42, 2008.